The present invention discloses a method for forming a device trench isolation film for a semiconductor device having impurity regions at the sidewalls of the trench. The method involves aligning the complexes in terms of signal amplitude by obtaining a baseline, thereby to provide a graphical representation of said train of ECG complexes; and aligning said complexes temporally using corresponding predetermined points. The heat spreader includes a post, a base and a cap. The logic is configured to adjust the brightness of the display to enable the device to operate for the duration of the predetermined time period responsive to determining the amount of remaining energy in the battery is insufficient to operate the apparatus for the duration of the predetermined time period based on the current power consumption of the apparatus.