The integrated memory has memory cells with a magnetoresistive storage effect in a memory cell array in the form of a matrix. The transparent conductive layers are disposed on a surface of the substrate and spaced apart from each other. 0, the reaction mixture is sprayed out of the nozzle at a flow rate of between 10\xd7S and 80\xd7S gsec, and, per gram reaction mixture, an amount of 0.