An electronically-synchronized flap system for a fixed-wing aircraft including a first wing including a first flap panel, the first flap panel being connected with a first in-board actuator and a first out-board actuator, and a second wing including a second flap panel, the second flap panel being connected with a second in-board actuator and a second out-board actuator. A first ion implantation process is then performed to form a first doping region around the V-shape structure in the semiconductor substrate. Interaction frees elemental sulfur which is filtered, excess continues to a stripper unit where the excess H2S is removed.