Methods and apparatus for making communications decisions are described. The second leg is positioned between the first leg and the third leg, and the primary winding is wound around the first leg, the second leg and the third leg. An implement is responsive to a co-action with another object. The same novel process sequence results in the presence of a thinner silicon layer, overlying the same SiGe layer in the PMOS region, allowing the PMOS channel region to exist in the biaxial compressively strained SiGe layer, resulting in hole mobility enhancement. Utilizing this technique permits the fabrication of semiconductor structures formed by high quality Group III-V nitride films.