In a method for forming a gate electrode, a dielectric layer having a high dielectric constant is formed on a substrate. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. 5 nm to about 5000 nm, and a polymer chain density ranging from 0. The insulative articles are flexible, stretchable, and bendable. In an embodiment, the apparatus includes a housing, a working element, and a linear drive that is configured to move the working element in at least one direction.