The present invention relates to a method for repairing and refurbishing catalytic heaters and to a replacement catalyst cartridge used therein. The channel region may extend from a top surface of the semiconductor region to a first depth within the semiconductor region. 5 wt %:Loss on drying=W2\xd7100. In the working areas, the convoy is disassembled, since single vehicles are each driven separately. More specifically, embodiments of the invention include a technique to perform cyclic redundancy code generation. In one aspect, the semiconductor layer is a continuous layer, and trenches defining the anodes in the diode region extend further inwardly of the semiconductor layer than does the base regions of the IGBT portion of the device.