1461016479-8c3d31cb-5d54-46ff-83ac-5d7c77060bd1

A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. In this module, a void is provided inside of the insulating substrate and in the vicinity of a surface of the distributed constant circuit element and the active element. Thereafter, the enhanced e-mail message from the e-mail enhancement path to the intended recipient. The vacuum grease and the mask isolated the adhesive from the structure at the center. The adhesive includes the reaction product of a reactive polyurethane adhesive and a catalytically effective amount of at least one amine catalyst with at least one active hydrogen. The holes also shorten the wet etching time.