An N type well is formed over a prescribed depth from a main surface of a semiconductor substrate, and a P type well and an N type drain region are formed in the N type well. A bracket attaching to the support column supports the hopper, for holding granular material, the bottom of the hopper including a series of apertures, and a control plate, to regulate the dispensing and spreading of granular material. The indexed file can consist of every document and application used during a session or categorically defined by project or tasks or personal preference. A related method for the preparation of an electrochemical cell is also presented.