Disclosed is a method for manufacturing a method for manufacturing a semiconductor device which comprises a substrate, a semiconductor chip and a plurality of terminals. A first thin film transistor of the two thin film transistors is coupled to the first pixel electrode, a second thin film transistor of the two thin film transistors is coupled to the second pixel electrode. Upon identification of potential shear stress local maxima, piping network operators may monitor these locations for corrosion or other damage to prevent loss of integrity of the pipes. The separation of the strength member termination area from the signal conductor termination area allows for several improvements in the DTCTA not possible in the prior art due to the previous need to terminate the signal conductors co-located with the strength termination member.