The respective sources of drive transistors included in memory cells that are located in each of multiple columns and connected to a corresponding one of bit line pairs are connected commonly to a low voltage power supply VSS via an assertion transistor. In various embodiments, the integrated circuit memory device includes a non-volatile memory array having a first emulated memory region and a second emulated memory region, and a controller having an interface. The method also includes conceptualizing the entrepreneurial opportunity into a plurality of potential products and distributing an economic risk. A normally closed valve is fluidly connected between the cathode outflow and the anode inflow. The grain size of the grains of the mounting part 51 in the vicinity of the fused part 42 is smaller than the grain size of the grains thereof in the vicinity of the ground electrode 27, and the grain size of the grains of the flange part 52 of the mounting part 51 is smaller than the grain size of the grains of the protruding part 54. As a result, it is possible to radially and uniformly spread the sound by a simple structure.