A mask for manufacturing a semiconductor device in accordance with the present invention is equipped with a first mask having separated patterns and a second mask having dense patterns, wherein the first mask and the second mask are exposed under respectively independent illumination conditions to transfer one set of exposure patterns. An etching solution of the invention contains, in addition to hydrofluoric acid, at least one acid whose dissociation constant is larger than that of HF. Adjacent linear-shaped layout features that share a common line of extent in the first parallel direction are separated from each other by an end-to-end spacing that is substantially equal across the gate electrode level layout and that is minimized to an extent allowed by a semiconductor device manufacturing capability. Optionally, this process can be accelerated using a contrast enhancement algorithm taking advantage of the circumstances that the nose is the part of a face reflecting the most light and that this reflected light is represented as a line-like region close to the real nose axis. The panels are connected together edge to edge in an elongated sheet by adjoining the jointed and the flush ends of the rods and then welding a plurality of splice bars alternatingly between adjacent ones of the rods at the joints. After the player has held and replaced cards to obtain a final hand of cards from which draw poker winnings are determined in a conventional manner, the final hand of cards is compared to the match hand of cards to determine additional winnings based on face value and suit matches between cards in the draw hand and in the match hand.