A first layer of titanium nitride is formed on a semiconductor structure, such as an interconnect via. In one embodiment, the thermoelectric device includes an electrical conductor thermally coupled to a cold plate and a thermoelement electrically coupled to the electrical conductor. Optionally, state mirroring occurs between the old cluster and the new cluster once the number of members of the old and new clusters are approximately equal. Each voltage control unit incorporates and determines its positional relationship to other voltage control units by logging when the unit is attached to the electrode. The composition has a high flash point and includes raw materials having low toxicity and low odor.