A dielectric film containing a nanolaminate with a hafnium oxide layer and a zirconium oxide layer and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using silicon oxide. Querying of the identifying information for the electronic data of the enterprise that is stored may also be provided. It is thus possible to rescue a write-in error which occurred at one nonvolatile memory by replacing it with any other chip. The invention also relates to an arrangement comprising an implant and a bore hole, and a method for insertion of an implant into a bore hole. At the same time the new system preserves all known advantages of the AC trackers.