It is an object to enable control according to an optimum temperature condition for a wavelength conversion device. In an LDMOS transistor embodiment, the source ballast resistance may be formed using a high sheet resistance diffusion self aligned to the polysilicon gate, andor by extending a depletion implant from under the polysilicon gate toward the source region. A detachable protective nose guard can be included. The attachments include quick release features to switch quickly between portrait and landscape modes. The power save mode may include period in which the device is in a low power state in which it cannot transmit or receive, and period in which it is in an operational state in which it can transmit andor receive. Other aspects, embodiments, and features are also claimed and described.