A recess gate-type semiconductor device includes a gate electrode having a recessed portion at least partially covering a recess trench in an active region, and sourcedrain regions disposed in the active region that are separated by the gate electrode. The method includes creating a library of tagged assets for the offshore asset using at least one independent survey set up, wherein each tagged asset has an icon with a hyperlink to a library of images. The second solid-state light source emits a light beam having a second directivity greater than the first directivity. A shutter is provided to shield the substrate member as the hot graphite rod assembly is heating up.