Exemplary embodiments of the invention generally include methods for forming multilayer metal interconnect structures using dual damascene methods that incorporate a via capping process to protect lower interconnection lines from etching damage or oxidation, for example, that may be caused by inadvertent exposure of lower interconnection lines to etching atmospheres. In one embodiment, information describing a task which is to be performed by a handheld tool is accessed. Each filament is connected at its outermost end to a flattened end portion of a lead wire which extends along the length of the filament from near the support bridge to the upper end of the filament. A second gradation converting unit performs a gradation conversion of the image data by setting a gradation conversion parameter based on a result of extracting the feature amount and the image quality mode. The projection slides in the front groove as the plunger is pulled into the barrel, while, it slides in the rear groove as the plunger is pushed out from the barrel. At least one deep trench isolation structure is disposed in the p-type bulk and adjacent to the n-type well region.