1461112937-f3ab3a0a-1d05-41c5-a097-3f12822ae5fe

MRAM cell including a magnetic tunnel junction including a reference layer, a storage layer having a storage magnetization, a tunnel barrier layer between the reference and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and free it at a high temperature threshold. In general, the technique includes displaying context information related to an email document. A rapid temperature change is caused in the container by switching a current flow direction of the Peltier element to heat or cool the container and at the same time releasing a transfer of a heat quantity or cooling quantity contained in the storage block to the container.