A cell scraper includes a grip, an elongate arm and a scraper blade. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100\xb0 C. A flow of cement is provided between the outside surface of the casing and the well for cementing the casing in place and isolating different layers of the well. The diverting means comprise a tube section with at least one inflow opening arranged in the peripheral wall of the diverting means. A corresponding computer program product and apparatus are also provided. The contact angle between the hoisting rope or hoisting ropes and the traction sheave is larger than 180\xb0.