To fabricate a crystalline semiconductor film with controlled locations and sizes of the crystal grains, and to utilize the crystalline semiconductor film in the channel-forming region of a TFT in order to realize a high-speed operable TFT. For example, in one exemplary method disclosed herein, a signature produced by a signature generator is received. The operating member 20 is configured to selectively perform coupling release of the cap 18 and removal of the refill case 13 by rotational operation about the predetermine center of rotation. The module is slidably mounted upon the carrier with the carrier penetrating the horizontal aperture and the electrical conductors in engagement with the electrical traces. These compounds also increase both breaking strength and crushing strength of bones evidencing use in conjunction with bone replacement surgery such as hip and knee replacements.