The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. An electronic display assembly includes an outer display tube housing for housing an electronic display device for generating images, the outer tube housing fabricated of an electrically conductive, non-ferrous material. The resistive memory comprises an upper electrode, a lower electrode and a TaOx based storage medium layer containing Ru doping and provided between the upper electrode and the lower electrode.