1461149516-6c132231-a632-4b7d-af8a-0cb987034ad4

A memory architecture that employs one or more semiconductor PIN diodes is provided. It is activated with Ce, the second component B representing at least one of the elements Al and Ga, and the first component A containing terbium. A transport member is provided for transporting the receiver to or from the fuser assembly, the transport member having a substrate bearing an oil-absorbing layer that includes transparent alumina inorganic particles of gamma-alumina, dispersed in an organic binder. A flag is connected to a rotary shaft of the shutter to rotate in a same direction and at a same rotating angle as the shutter. A cooling wind flows on the second surface.