A method for producing a semiconductor device includes forming an aluminum layer on a core substrate, anodizing the aluminum layer into an alumina layer having a plurality of nanoholes, forming an n-type GaN layer by growing crystals of a compound semiconductor such as an n-type GaN on the alumina layer and inside the nanoholes, and dissolving the alumina layer with an acid. Some of the illustrative embodiments may be a system comprising a portable computer comprising a docking receptacle on an outer portion of the portable computer, and a personal digital assistant. When designing the page file a developer may use declarative statement, so that certain properties of the specified controls may be altered based on the particular type of target device. When certain conditions set up for the first part are fulfilled, this part is streamed via a first bit stream, and when certain conditions set up for the second part are fulfilled, the second part is downloaded via a second bit stream.