A memory structure is provided that controls the activation of error handling bits as a function of operating voltage. The method comprises providing a substrate having a high-k dielectric layer deposited thereon in a process chamber and introducing a nitrogen containing gas into the process chamber to incorporate nitrogen into the high-k dielectric layer. An arm extends from an end of the rigid member and a finger extends from the arm and is receivable in a hollow channel formed in an attachable member of rigid material. The pair of elastic elements is elastically connected between the electronic device and the corresponding bar members.