In an exemplary implementation, a method includes growing a III-Nitride body over a group IV substrate in a semiconductor wafer. In Formula, R1, R2, R3, R4, R3\u2032, R10 and R11 are as described herein. The system comprises a modular, plastic, endless conveyor belt comprising plastic modules linked by means of a connecting pin, accumulation elements for accumulating objects provided in at least some of the modules, and with drive means for driving the belt. That allows the reflectors to be of larger size providing smaller spot beams. A ground shield cover is mounted on the housing at the rear thereof for shielding at least major portions of the signal terminals.