The present invention relates to a method of forming an isolating trench of a semiconductor device with a dielectric material, and to a method of forming an isolating trench in a memory device. The multi-layer core comprises a thermoset rubber inner core, a thermoplastic first intermediate core layer, a thermoplastic second intermediate core layer, and a thermoset rubber outer core layer. Generally, the ramp is made up of an upwardly inclined support structure having an upper surface and a lower surface. The backlight assembly includes a light guiding plate for guiding the light emitted from the lamp and the lamp holder and for emitting the guided light and a receiving container for receiving the lamp assembly and the light guiding plate. Network services are then commenced in accordance with the output of the mapping of features associated with a sensed network communication component.