To enhance electromigration resistance of an electrode. The device includes a first MISFET in which hafnium is added to the gate electrode side of a first gate insulation film including silicon oxynitride, and a second MISFET in which hafnium is added to the gate electrode side of a second gate insulation film including silicon oxynitride. A measurement circuit is adapted to measure impedance between the electrode and ground as the electrode approaches a target tissue. In one example, the substrate is provided with a tongue or a groove defined in any one, combination, or each of the respective side edges of the substrate, as desired.