A semiconductor device includes a substrate of a first type of conductivity provided with at least one gate on one of its faces, and at least two doped regions of a second type of conductivity for forming a drain region and a source region. The semiconductor laminated body includes a plurality of trenches arranged in a periodical manner to penetrate through the second semiconductor layer and the semiconductor light emitting layer and reach the first semiconductor layer. Furthermore, the dental materials have increased resistance to microleakage and have increased bond strengths. The binarized data is split according to types of objects, and characters and line drawings are vectorized and stored in a storage unit. Due to the reduced dimensions of the thin-walled first nozzle portion, a much smaller weld pad and pad-to-nozzle weld can be used. Compliant LGA bumps are applied to the uncured conductive adhesive material which material is then cured.