A method for fabricating a semiconductor device comprises the steps of: forming interconnection grooves 38 in an inter-layer insulation film 34; forming an interconnection layer 44 of Cu as the main material in the interconnection grooves 38; and concurrently injecting nitrogen gas and water to the surface of the interconnection layer 44 buried in the interconnection groove 38. A probe supporting plate is provided to a lower face side of a printed wiring board of a probe card. Additional dilution ratios, flow rates, and chemical fluids are selectable by diverting motive fluid to another channel or combinations of channels. Radius of curvature of the road is obtained as a by product of this representation. When the cutting blade is reciprocated across a grouted work surface, it results in a high rate of grout removal with low dust dispersion.