Systems and methods for virtual interactions are described. The silicon-on-insulator is additionally provided with a polarizing arrangement deposited on a predetermined portion of the waveguide, the polarizing arrangement being provided with a bottom metal layer, a dielectric gap, and a top metal layer, the bottom metal layer being deposited on the cladding layer. 0 \u03bcm or less and a coefficient of variation of equivalent sphere diameters of 3% or more and 30% or less. LLIDs are grouped into classes and processing is done class by class. The inner skirt has one or more cut-outs in register with the or each pressing zone whereby to allow greater deflection thereof. Barrier layers can also be comprised of GaAsP.