A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The rotor core has a boss, a disc portion and a cylindrical part. The flowable precursor coating material is flowed from the source of the flowable precursor coating material and through the internal passage of the airfoil. As such, the location calculation can be refined by accounting for the RF group delays of the first other network device andor the client device. The interface circuit is configured to present at least one virtual flash memory device to the host system, wherein the interface circuit is configured to implement the virtual flash memory device using the one or more flash memory devices to which the interface circuit is coupled. To simplify the design and the manufacturing process, it is provided that the teeth between the outer rotary part and the second stabilizer part be made clearance-free and welded together by a circumferential weld seam, wherein the seam area is preheated to a temperature of 350\xb0 C.