The present invention discloses a semiconductor device and a method for manufacturing the semiconductor device. The non-volatile elementary memory cells of the two groups are coupled firstly to a supply terminal and secondly to the outputs and to the inputs of the two inverters via a controllable interconnection stage. The neurosurgical guide device comprising a tube for insertion into a brain of a patient to a vicinity of a desired target, wherein the tube has a head attached to one end thereof, and whereby an instrument can be introduced through the opening and passed along the bore from a proximal end to a distal end thereof. In another embodiment, the condensation is conducted on a syngas feed to a Fischer-Tropsch reactor and removes a significant portion of catalytically poisonous nitrogen compounds. Then the vapor of the work fluid condenses into the work fluid in the second chamber.