1459831230-c4663cdc-26c7-4d98-ae44-069e18f1d6a5

A method is described to form a nonvolatile memory cell having a contact area between a phase-change material such as a chalcogenide and a heat source which is smaller than photolithographic limits. More specifically, the invention relates to an improved process for the manufacture of 2-secondary-alkyl-4,5-di-normal-alkylphenols. Various target parameters associated with each frequency line track are processed by processor to derive tonal association information about possible targets which is displayed on display.