A memory cell of a nonvolatile semiconductor memory device according to an embodiment of the invention has a MONOS structure. The mobile station transmits a request portion of an access probe over the first reverse link common control channel. The first and second heating elements have different coefficients of thermal resistance that cause the heating of the second heating element to increase relative to that of the first heating element when the overall temperature increases or when power provided by a power source increases. The contact arm length of elastic contacts can be substantially greater than the effective array pitch of the plurality of pairs of opposed contacts. The isolation region is positioned in a trench that is formed with first and second etching process in which the latter etches different crystallographic directions of a single-crystal semiconductor material at different etch rates. In some embodiments, an aperture is included on the hinge spine, such that a portion of the placard can be seen from the end of a folded sleeve assembly.