The present invention is a light directing construction for use in a display apparatus. The nonvolatile memory cell includes a vertical field-effect transistor. Magnetic field, temperature, or a combination of both, may be used to control the superconducting properties of the superconductor. Control andor boot code data are written onto the flash memory device. The switch controller further includes a logic circuit for receiving the modulated signal and delayed signal to generate the commuted enable signals. Under reverse bias, the barrier is substantially reduced or disappears, allowing charge carriers to move from the absorbing P region into the N region where they are detected.