A wafer of passive components is diced to leave a flat passive chip. The light emitting device includes a first conductive semiconductor layer, an InxGa1-xN layer on the first conductive semiconductor layer, a GaN layer on the InxGa1-xN layer, a first Aly1Ga1-y1N layer on the GaN layer, an active layer on the first Aly1Ga1-y1N layer, and a second conductive semiconductor layer on the active layer. Pharmaceutical compositions containing one or more of the compounds are also included.