A manufacturing method of a semiconductor device includes forming an oxide semiconductor thin film layer of zinc oxide, wherein at least a portion of the oxide semiconductor thin film layer in an as-deposited state includes lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d002 of at least 2. It comprises a spacer block with a smooth bore hole, a plurality of air fins, each air fin being connected at one end to the spacer block and the distal end extending to about the center of the bore hole, and a means for mounting the throttle spacer body to hold it in place. The mask cell is coupled to a second pull-down transistor and a second pull-up transistor. In one embodiment, the projections have a higher coefficient of static friction than the base layer relative to a surface. Additionally, since the spatial centers of gravity of the added or averaged signals are arranged at equal intervals in a Bayer array, it is possible to reduce false color generation and suppress the decrease in the spatial resolution.