A composition for a hardmask including copolymer including repeating units represented by Chemical Formulae 1 and 2 and a solvent, a method of forming a pattern using the same, and a semiconductor integrated circuit device including a pattern formed using the method are provided. Local homography at the CC level is then applied to individual footprint areas of the previously identified paired CC to further clean feature point correspondence. Further, one or more interconnect components include one or more support elements having a first surface and a second surface, and one or more spring elements having a first end and a second end, and wherein first ends of the one or more spring elements are coupled to the first surface or the second surface of a respective support element. Circuit board space on the processor side of the circuit board is increased by moving the voltage regulator to the opposite side.