Disclosed is a pressure sensitive adhesive insulation structure for joining two adjacent insulation structures. A high voltage tolerant transistor formed over a semiconductor substrate includes: a well region of a first conductivity type; a first impurity region as the source region; and a second impurity region as a drain region. The light emerges from the outflow pipe at the end face, and may also emerge at an exposed outer peripheral surface area of the outflow pipe. Methods for manufacturing the ceramic composite cells are also provided, including a method for manufacturing stabilized zirconia and for use in the ceramic materials used within the ceramic composite cell. The semiconductor device is adapted such that the control circuit board is mounted over the protruded end of the metal ring and is fixed onto the connection portion by an engagement member.