Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride, siliconoxynitride andor silicon dioxide. A low voltage controller is adapted to fit into a standard wiring box, and the controller provides isolationseparation of the low voltage wiring from other wiring. A third electrode having a conductive element is positioned along the control unit in close proximity adjacent to the connector.