A process provides a gate dielectric layer of a first thickness for a memory array and for certain peripheral circuits on the same substrate as the memory array. Alternately, use may be made of the fluid injection valve or static mixer section alone. Further, the system includes a balanced diode bridge configured to suppress arc formation between contacts of the micro-electromechanical system switch. The controller may also establish additional ClimateTalk\u2122 networks between the controller and each of the first, second and third thermostats, by identifying the controller as a distinct ClimateTalk\u2122 HVAC unit in each of the respective additional networks. The charge trap type non-volatile memory device includes a memory cell array including a charge trap memory cell, and a high voltage generator for supplying a detrap pulse to the charge trap memory cell.