Methods of preparing a carbon doped oxide layer with a low dielectric constant and low residual stress without sacrificing important integration properties such as dry etch rate, film stability during wet cleaning, electrical leakage current, and extinction coefficient are provided. A first auxiliary electrode is disposed between the second splitter and a third splitter on the first arm. A region of a second conductivity type is formed in the bottom of each trench. The voltage and current magnitudes are used to determine the impedance at the one or more frequencies. During erase verification, the memory programs the erase register when a non-erased memory cell is located in a corresponding sub-block. The cutting insert is moveable from a retracted position to an extended position by means of a pressurized fluid which bears directly against the cutting insert.