1459851900-36c980ad-8baa-4bf4-abb8-0e7086ab40a9

Provided is a semiconductor device having a vertical channel transistor and method of fabricating the same. An insulating sheet member is arranged on the side of the semiconductor structure. When the reproduced signal is in a continuous-wave interval, a phase error is extracted on the self-running-timing basis. The closure may further include a tongue for facilitating opening the container. In some embodiments, circuitry in the IO banks can be configured to shift the OCT calibration code by one or more bits to adjust the series andor parallel on-chip termination impedance in one or more IO buffers.