In an ion implantation system including an ion source a mass analyzing portion, an ion acceleration portion, an ion beam focusingdeflecting portion, and an end station chamber for implanting ions onto a semiconductor substrate. A tether connects the truck to the tank and constrains the truck to movement in a circular path around the vertical axis of the tank. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The electrodes are spaced apart to define an inter-electrode gap therebetween.