A method for forming a germanium-based layer is provided. This invention includes an agent for each student which adapts to its student, and provides individualized guidance to the student and controls to the augmented computer assisted instructional materials. A second etching process is used to change crystal orientation and thus create a widened trench with modified trench walls having a predetermined crystal orientation. The patternable material may define openings to the conductive surface for use in formation of light emitting elements on the conductive surface.