A memory device operates in a calibration mode during which the effects of bit line leakage current are measured and to operate in a normal mode during which the bit line current is adjusted to compensate for leakage according to the results of the calibration mode. The system includes a scrubber tank containing a carbon dioxide absorbent fluid and configured to bubble exhaust gas from the heat exchanger through the carbon dioxide absorbent fluid, whereby carbon dioxide gas is absorbed by the carbon dioxide absorbent fluid. The invention also relates to methods for producing a soybean plant containing in its genetic material one or more transgenes and to the transgenic soybean plants and plant parts produced by those methods.