Methods and apparatus are described that allow an integrated circuit designer to design integrated circuits for more than one process technology using a single master design environment. Surface irregularities are formed in the shaft or adhesive that holds the film onto the shaft to diffuse the light and thereby prevent the formation of focal \u201chot spots\u201d in the room below. In particular, the carbon-containing silicon oxide film is plasma etched using a plasma generated from a source gas comprising NH3 and CxFy. From these calculated correlation values, synthesis weights are generated. At least a portion of that carbon dioxide is dissolved as a gas into one or both of the reaction components.