Support structures for semiconductor devices and methods of manufacturing thereof are disclosed. In turn, the electrical cable can be routed substantially tangentially away from the electronic apparatus in a predetermined direction. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. A sensor network may have distributed memory for a more simplified configuration.