Silicide interfaces for integrated circuits, thin film devices, and backend integrated circuit testing devices are formed using a barrier layer, such as titanium nitride, disposed over a porous, thin dielectric layer which is disposed between a silicon-containing substrate and a silicidable material which is deposited to form the silicide interfaces for such devices. By providing for separate partitions, a failure or error arising during an upgrade to the storage operating system will not corrupt the other partitions. The signal is operable to prevent the device from transmitting a set of remaining frames for a packet to which the frame belongs. The coating can be etched at surface portions during coating stage to expose the tops of metal bumps.