A semiconductor device is made by mounting an insulating layer over a temporary substrate. The first and second marks formed on the substrate are detected optically to obtain dimension detection data of the first or second mark as well as respective position detection data of the first and second marks. The drain-source ON-resistance of the switch, realized by a high-voltage MOSFET, is kept to a minimum. Nitrogen containing compounds in the aromatic substrate, alkylating agent, or both can be monitored in a range 15 wppb to 35 wppm by dry colorimetry. The invention also relates to a diaphragm device, a method for applying a pressing power and a method for exchanging a diaphragm in a press of pressure cell type.