The present invention discloses a cell array block of a ferroelectric random access memory and an FeRAM using the same. The workpieces are flash heated so that only the surface is heated to remove the coatings without heating the core of the workpieces. The deposit step is followed by an oxidizing step. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Various capillary structures are also provided for fabricating flat heat pipes.